@article{13e93f86675d44b0a357034e944ac2b8,
title = "Annealing effects of in-depth profile and band discontinuity in TiN/LaO/HfSiO/SiO2/Si gate stack structure studied by angle-resolved photoemission spectroscopy from backside",
abstract = "We have investigated annealing effects on in-depth profile and band discontinuity for a metal gate/high- k gate stack structure on a Si substrate using backside angle-resolved photoemission spectroscopy with synchrotron radiation. In-depth profiles analyzed from angle-resolved photoemission spectroscopy show that La atoms diffuse through the HfSiO layer and reach interfacial SiO2 layers by rapid thermal annealing. Chemical shift of Si 2p core-level spectra suggests that there are changes in the band discontinuity at the high- k/SiO2 interface, which is well related to the Vth shift based on the interface dipole model.",
author = "S. Toyoda and H. Kamada and T. Tanimura and H. Kumigashira and M. Oshima and T. Ohtsuka and Y. Hata and M. Niwa",
note = "Funding Information: This work was supported by Semiconductor Technology Academic Research Center (STARC). Synchrotron-radiation photoemission measurements were performed under the project 05S2-002 and 08S2-003 at the Institute of Materials Structure Science in KEK. In-depth analysis project is supported by JST-CREST. Copyright: Copyright 2010 Elsevier B.V., All rights reserved.",
year = "2010",
doi = "10.1063/1.3298355",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",
}