Annealing effect on the electrical properties of La2O 3/InGaAs MOS capacitors

T. Kanda, D. Zade, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, E. Y. Chang, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

The electrical characteristics of InGaAs MOS capacitors with 8-nm-thick La2O3 gate dielectrics have been measured. The effects of annealing temperature and annealing time on the interface state densities (Dit) have been extracted. It has been found that the low D it can be achieved by lowering the annealing temperature for an extended period of time.

元の言語English
ホスト出版物のタイトルChina Semiconductor Technology International Conference 2011, CSTIC 2011
ページ483-487
ページ数5
エディション1
DOI
出版物ステータスPublished - 2011
外部発表Yes
イベント10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
継続期間: 2011 3 132011 3 14

出版物シリーズ

名前ECS Transactions
番号1
34
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Other

Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011
China
Shanghai
期間11/3/1311/3/14

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント Annealing effect on the electrical properties of La<sub>2</sub>O <sub>3</sub>/InGaAs MOS capacitors' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Kanda, T., Zade, D., Lin, Y. C., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Chang, E. Y., Natori, K., Hattori, T., & Iwai, H. (2011). Annealing effect on the electrical properties of La2O 3/InGaAs MOS capacitors. : China Semiconductor Technology International Conference 2011, CSTIC 2011 (1 版, pp. 483-487). (ECS Transactions; 巻数 34, 番号 1). https://doi.org/10.1149/1.3567624