Anisotropic Si etching condition for preparing optically smooth surfaces

Minoru Sasaki, Takehiro Fujii, Kazuhiro Hane

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A combination of dry and wet anisotropic Si etching has been found to be useful for preparing hexagonal holes having smooth sidewall surfaces. The dry etching defines the main shape, and the subsequent short-time wet etching smoothens the sidewall of the {110} surface. The etchant used is made up of ethylenediamine pyrocatechol and water. The surface roughness is quantitatively investigated for improving the sidewall smoothness. The angular alignment accuracy between the pattern and the crystallographic orientation is found to be important. The triangular etching pit obtained by the dummy etching is used for confirming the crystallographic orientation. The surface roughness of <20 nm Ra is repeatedly obtained. The solid polymer dye microcavity laser is fabricated as a replica of the Si structure obtained. The lasing spectra from microcavities show the higher Q value.

本文言語English
ページ(範囲)83-92
ページ数10
ジャーナルSensors and Materials
15
2
出版ステータスPublished - 2003 1月 1

ASJC Scopus subject areas

  • 器械工学
  • 材料科学(全般)

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