Anisotropic effective mass approximation model to calculate multiple subband structures at wide-gap semiconductor surfaces: Application to accumulation layers of SrTiO3 and ZnO

R. Yukawa, K. Ozawa, S. Yamamoto, R. Y. Liu, I. Matsuda

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Abstract We propose a simplified theoretical model that well reproduces the dispersion curves of the multiple subbands in a two-dimensional electron gas in the accumulation layer at the surfaces of wide-gap semiconductors. The electronic band structures containing multiple subbands with different orbital characteristics are derived by self-consistently solving the Poisson-Schrödinger equations with anisotropic effective mass approximations. Calculations were carried out on the two-dimensional electron gas states formed at the surfaces of SrTiO3 and ZnO for comparison. The calculated subband structures at the SrTiO3 surface were in excellent agreement with available angle-resolved photoelectron spectroscopy data, confirming the validity of the present model. The calculations further indicate the existence of a high electron density, exceeding 2 × 1021 cm-3 and a high electric field of 20 MVcm-1 at the surface. Moreover, photoelectron-escape depths are discussed quantitatively and photoelectrons from the first subband are found to dominate the total photoelectron intensity in the spectra.

本文言語English
論文番号20565
ページ(範囲)224-230
ページ数7
ジャーナルSurface Science
641
DOI
出版ステータスPublished - 2015 7 25
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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