Anisotropic behavior in resistivity of RAgSb2 ( R=Ce, La )

Y. Watanabe, Y. Inada, H. Hidaka, H. Kotegawa, T. C. Kobayashi, T. D. Matsuda, D. Aoki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

CeAgSb2 crystallizes in the tetragonal ZrCuSi2 type structure (P4/nmm), which consists of Sb-Ce, Sb-Ag-Ce, Sb-Sb layers. It shows the peculiar anisotropic ferromagnetic ordering below 9.7 K with a small ordered moment of 0.33 μB. Its residual resistivity steeply increases above pc ≅ 3.3 GPa where the magnetic order disappears. It is expected that the p-f mixing on the peculiar hollow square pillar-like Fermi surface plays an important role in CeAgSb2, while similar Fermi surfaces were not observed in LaAgSb2. We have measured the anisotropy in the electrical resistivity of CexLa1-xAgSb2 to study the p-f mixing effect. Small humps were observed in the temperature dependence of the resistivity in CexLa1-xAgSb2. We expected them the CDW transition. The CDW state coexisted with the ferromagnetic state around x = 0.2.

本文言語English
ページ(範囲)827-828
ページ数2
ジャーナルPhysica B: Condensed Matter
378-380
SPEC. ISS.
DOI
出版ステータスPublished - 2006 5 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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