Anion-exchange separation of zirconium from hafnium using a multi-column method

Masahito Uchikoshi, Koji Mimura, Minoru Isshiki

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

HfO 2 is expected to be a gate dielectric used in ULSI alternatives to SiO 2. Although the materials used in ULSI are required to be significantly pure, commercial Hf contains > 2 mass% Zr. It is important to establish a process for removing Zr from Hf. In the present study, anion-exchange separation using a multi-column method was employed. The separation tests were carried out at variety of temperatures and flow rates. The decrease in the flow rate of the mobile phase made the elution curves of both Hf(IV) and Zr(IV) broaden contrary to the case of Co(II), Cu(II), or Fe(III). This is caused by the difference in adsorption rate on the anion-exchange resin. In addition, more than one column was connected in series in order to enhance the separation. As a result, the content of Zr(IV) was successfully reduced to 1/100 of that relative to the raw material.

本文言語English
ホスト出版物のタイトルT.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization - Held During the TMS 2012 Annual Meeting and Exhibition
ページ303-314
ページ数12
出版ステータスPublished - 2012 5 14
イベントT.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization - TMS 2012 Annual Meeting and Exhibition - Orlando, FL, United States
継続期間: 2012 3 112012 3 15

出版物シリーズ

名前TMS Annual Meeting

Other

OtherT.T. Chen Honorary Symposium on Hydrometallurgy, Electrometallurgy and Materials Characterization - TMS 2012 Annual Meeting and Exhibition
国/地域United States
CityOrlando, FL
Period12/3/1112/3/15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金

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