Anion arrangement effects on electronic states of κ-type BEDT-TTF compounds

Yuto Nakamura, Naoki Yoneyama, Takahiko Sasaki, Takaaki Hiramatsu, Yukihiro Yoshida, Gunzi Saito, Hideo Kishida

研究成果: Article査読

抄録

We investigate the anion arrangement effect on the electronic states of various bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) compounds composed of BEDT-TTF layers and counter-anion networks via Raman scattering measurements. The anion vibrational modes and charge-sensitive BEDT-TTF vibrational modes of disordered-anion compounds κ-(BEDT-TTF)2Cu2(CN)3, κ-(BEDT-TTF)2Ag2(CN)3, and (BEDT-TTF)Ag4(CN)5, indicate splitting, contrary to the case of non-disordered-anion compounds κ-(BEDT-TTF)2Ag(CN)[N(CN)2] and κ-(BEDT-TTF)2Cu- [N(CN)2]Cl. The splitting behaviors indicate that several possible arrangements of CN bonds exist in the anion networks. These results suggest that the disorder in the anion structures is not directly due to the recently reported charge disproportionation or relaxor-like dielectric response in some κ-type BEDT-TTF compounds. Additionally, in κ-(BEDTTTF) 2Cu2(CN)3, the frequency of the anion mode and the dielectric constant have local maxima at the same temperature. This result suggests that the anion modes are affected by the dielectric responses of the counter cations.

本文言語English
論文番号054703
ジャーナルjournal of the physical society of japan
90
5
DOI
出版ステータスPublished - 2021 5 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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