Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase, T. Hattori

    研究成果: Conference article査読

    23 被引用数 (Scopus)

    抄録

    It was found by applying maximum entropy concept to angle-resolved Si 2p and N 1s photoelectron spectra that the distribution of nitrogen atoms and their bonding configurations in oxynitride films formed by nitridation of silicon oxide in nitrogen plasma followed by annealing is quite different from those in oxynitride films formed by nitridation of silicon oxide in NO ambient. Here, the nearest neighbors of silicon and nitrogen atoms determined from the deconvolution of Si 2p and N 1s spectra were considered.

    本文言語English
    ページ(範囲)98-101
    ページ数4
    ジャーナルMicroelectronic Engineering
    80
    SUPPL.
    DOI
    出版ステータスPublished - 2005 6 17
    イベント14th Biennial Conference on Insulating Films on Semiconductors -
    継続期間: 2005 6 222005 6 24

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 原子分子物理学および光学
    • 凝縮系物理学
    • 表面、皮膜および薄膜
    • 電子工学および電気工学

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