Angle-resolved photoelectron spectroscopy study on ultrathin gate dielectrics

Hiroshi Nohira, Takeo Hattori

    研究成果: Conference contribution

    抄録

    The paper reviews the non-destructive depth profiling of the composition and the chemical structure of ultrathin oxynitride films and ultrathin silicon nitride films using angle-resolved photoelectron spectroscopy. Depth profiles of nitrogen atoms in silicon oxynitride films were determined by applying the maximum entropy concept to angle-resolved photoelectron spectra. The layered structures of silicon nitride films formed using nitrogen-hydrogen radicals were determined by measuring soft X-ray excited angle-resolved photoemission from Si 2p, N 1s, and O 1s core levels with the same probing depth.

    本文言語English
    ホスト出版物のタイトルECS Transactions - 5th International Symposium on ULSI Process Integration
    ページ183-194
    ページ数12
    6
    DOI
    出版ステータスPublished - 2007 12 1
    イベント5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
    継続期間: 2007 10 72007 10 12

    出版物シリーズ

    名前ECS Transactions
    番号6
    11
    ISSN(印刷版)1938-5862
    ISSN(電子版)1938-6737

    Other

    Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
    CountryUnited States
    CityWashington, DC
    Period07/10/707/10/12

    ASJC Scopus subject areas

    • Engineering(all)

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