Analytical surface potential expression for thin-film double-gate SOI MOSFETs

Kunihiro Suzuki, Tetsu Tanaka, Yoshiharu Tosaka, Hiroshi Horie, Yoshihiro Arimoto, Takashi Itoh

研究成果: Article査読

52 被引用数 (Scopus)

抄録

Using a perturbation theory, we derived an analytical surface potential expression for subthreshold and strong-inversion regions. This enabled us to derive analytical models for the subthreshold slope, threshold voltage, and induced electron concentration of a double-gate SOI MOSFET. We also clarified the dependence of the device characteristics on device parameters, and explained the ideal subthreshold factor. We do not expect volume inversion in practical devices. Our models' predictions agree well with numerical and experimental data.

本文言語English
ページ(範囲)327-332
ページ数6
ジャーナルSolid State Electronics
37
2
DOI
出版ステータスPublished - 1994 1 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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