Analytical investigation on design instruction to avoid oscillatory false triggering of fast switching SiC-MOSFETs

Yusuke Sugihara, Kimihiro Nanamori, Seiya Ishiwaki, Yuma Hayashi, Kyota Aikawa, Kazuhiro Umetani, Eiji Hiraki, Masayoshi Yamamoto

研究成果: Conference contribution

18 被引用数 (Scopus)

抄録

SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high temperature operation. Particularly, disastrous oscillation of repetitive false triggering can occur after a fast turn-off, which is the severe issue for practical application of SiC-MOSFETs. The purpose of this paper is to give an instruction to avoid this phenomenon. This paper hypothesized that the repetitive false triggering is the parasitic oscillation caused by parasitic capacitance of SiC-MOSFET, and parasitic inductance of wiring. Based on this hypothesis, this paper analyzed the oscillatory condition of the parasitic oscillator to propose a design instruction to avoid the oscillatory false triggering. The result revealed that the parasitic inductance of the gate, drain, and source wiring should be designed so that the resonance frequency of the parasitic LC resonator in the gating circuit is far apart from that of the power circuit. This paper also presents experimental results that support appropriateness of the proposed design instruction.

本文言語English
ホスト出版物のタイトル2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ5113-5118
ページ数6
ISBN(電子版)9781509029983
DOI
出版ステータスPublished - 2017 11月 3
外部発表はい
イベント9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017 - Cincinnati, United States
継続期間: 2017 10月 12017 10月 5

出版物シリーズ

名前2017 IEEE Energy Conversion Congress and Exposition, ECCE 2017
2017-January

Conference

Conference9th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2017
国/地域United States
CityCincinnati
Period17/10/117/10/5

ASJC Scopus subject areas

  • エネルギー工学および電力技術
  • 電子工学および電気工学
  • 再生可能エネルギー、持続可能性、環境
  • 制御と最適化

フィンガープリント

「Analytical investigation on design instruction to avoid oscillatory false triggering of fast switching SiC-MOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル