Analysis of the energy structure of nitrogen δ-doped GaAs superlattices for high efficiency intermediate band solar cells

Shunsuke Noguchi, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, Shigeyuki Kuboya, Hiroyuki Yaguchi

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E+ band of nitrogen δ-doped regions were observed in photoreflectance (PR) spectra at energies ranging 1.5-1.7 eV for the superlattices at which no transitions were observed for uniformly doped GaAsN. The PR signal intensity of E + related band transitions is significantly higher than those observed in uniformly doped GaAsN. This enhancement of E+ related band transitions is advantageous as an intermediate band material, and thus, nitrogen δ-doped GaAs superlattice structures are expected to be an excellent alternative for the use of intermediate band solar cells.

本文言語English
ホスト出版物のタイトルProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
ページ83-86
ページ数4
DOI
出版ステータスPublished - 2012 11 26
イベント38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
継続期間: 2012 6 32012 6 8

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period12/6/312/6/8

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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