Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu

研究成果: Article査読

42 被引用数 (Scopus)

抄録

Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, VD, was 0.53V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73eV calculated from the thermoionic emission theory; the VD was about 1.5V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.

本文言語English
論文番号223701
ジャーナルJournal of Applied Physics
115
22
DOI
出版ステータスPublished - 2014 6月 14
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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