13 被引用数 (Scopus)

抄録

We have developed a novel liquid-phase epitaxial (LPE) technique that uses Ga-Al flux to grow AlN layers on nitrided sapphire substrates. In this study, cross-sectional and plan-view images were taken using a transmission electron microscope. An edge dislocation was dominant in the LPE AlN layers; its density was approximately 5 × 10 9 cm -2. Convergent-beam electron diffraction analysis revealed that the LPE layer had Al polarity, even though the nitrided sapphire layer had N polarity. The oxygen potential in the injecting N2 gas played an important role in the polarity inversion in the LPE growth.

本文言語English
論文番号101001
ジャーナルApplied Physics Express
5
10
DOI
出版ステータスPublished - 2012 10

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

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