ANALYSIS OF THE ATOMIC STRUCTURE OF THE Si(111) ROOT 3 multiplied by ROOT 3 - Bi SURFACE BY X-RAY PHOTOELECTRON DIFFRACTION.

Chong Yun Park, Tadashi Abukawa, Kazuyuki Higashiyama, Shozo Kono

研究成果: Article査読

13 被引用数 (Scopus)

抄録

It is found by X-ray photoelectron spectroscopy and LEED that the saturation coverage of Bi is one monolayer for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface. Azimuthal dependence of Bi 4d photoelectron diffraction has been measured for the Si(111) ROOT 3 multiplied by ROOT 3-Bi surface and analyzed kinematically. The results of the analysis have confirmed the presence of Bi-triplets with sides of 3. 1 A as proposed by X-ray diffraction. It is further found that the Bi-triplets form an overlayer on the substrate.

本文言語English
ページ(範囲)1335-1337
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
26
8
出版ステータスPublished - 1987 8 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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