Analysis of silicon surface in connection with its unique electrochemical and etching behavior

Hirokazu Fukidome, Teruhisa Ohno, Michio Matsumura

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We have found that silicon shows a large anodic current and a high etching rate in ammonium fluoride solutions at a pH of approximately 6.4. The reason for the unique pH dependencies was investigated by analyzing silicon surfaces after treatments with ammonium fluoride solutions at various pHs. Zeta potentials of the surfaces treated with a solution at a pH of approximately 6.4 were different from those treated at other pHs, suggesting a high reactivity in solutions in this pH region with silicon surfaces. X-ray photoelectron spectra of silicon showed that the amount of fluorine atoms bound to the surface was largest after treatment with a solution at a pH 6.4. These results are discussed in connection with the unique electrochemical and etching behavior of silicon in aqueous solutions of ammonium fluoride.

本文言語English
ページ(範囲)679-682
ページ数4
ジャーナルJournal of the Electrochemical Society
144
2
DOI
出版ステータスPublished - 1997 2
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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