Analysis of possible deformation mechanisms in helium-ion irradiated SiC

S. Nogami, S. Ohtsuka, M. B. Toloczko, Akira Hasegawa, K. Abe

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Possible modes of accommodating deformation during physically constrained swelling of SiC during He-ion irradiation (∼2 × 1022 He/m2 below 200 °C) were studied using finite element modeling. When accommodating deformation occurs only by elastic deformation, calculated internal stresses are much higher than the fracture stress for SiC. On the other hand, stresses below the fracture stress result when allowing irradiation-enhanced creep (IEC) to act as an additional accommodation mechanism. For a steady-state IEC compliance coefficient for SiC equal to 6 × 10-5 MPa-1 dpa-1, the maximum observed von Mises stress was less than the fracture stress of the material. This value for the creep compliance appears to be significantly larger than the few experimentally available measured values for crystalline SiC in the open literature.

本文言語English
ページ(範囲)1178-1182
ページ数5
ジャーナルJournal of Nuclear Materials
307-311
2 SUPPL.
DOI
出版ステータスPublished - 2002 12月

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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