Analysis of linear energy transfer effects on the scintillation properties of Bi4Ge3O12 crystals

Masanori Koshimizu, Satoshi Kurashima, Atsushi Kimura, Mitsumasa Taguchi, Takayuki Yanagida, Yutaka Fujimoto, Keisuke Asai

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We analyzed the linear energy transfer (LET; energy deposited onto the target per unit length) effects on the scintillation properties of Bi4Ge3O12 (BGO) with an emphasis on the dynamical aspect. We irradiated BGO with 20 MeV H±, 50 MeV He±, and 220 MeV C5+. We observed that the rise and the decay of the scintillation temporal profiles are faster at higher LET. The faster decay at higher LET is attributed to the competition between the radiative transition of self-trapped excitons (STEs) localized at Bi3+ ions and the quenching caused by the interaction between STEs. The faster rise can be explained in terms of the competition between the quenching caused by the interaction between excited states and the formation of the STEs.

本文言語English
ページ(範囲)19-22
ページ数4
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
409
DOI
出版ステータスPublished - 2017 10 15

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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