Analysis of intrinsic stress in and microstructure of Si thin films using molecular dynamics

Hiroshi Moriya, Tomio Iwasaki, Akio Yasukawa, Hideo Miura

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The microstructure of silicon thin films deposited onto the (001) surface of silicon substrates and the intrinsic stress present in them were studied using three-dimensional molecular dynamics simulation. The Tersoff potential was used to represent the interaction among the silicon atoms. Simulation results show that such thin films have crystalline structures at deposition temperatures T/Tm>0.45 (T : absolute temperature, Tm: melting temperature) while they are amorphous at T/Tm<0.45. The pair correlation function and bond-angle distribution for amorphous silicon obtained from our simulations agreed well with experimental results. The simulation results show that the tensile stress in amorphous silicon films increases and that the variations in stress caused by the difference in the positions at which deposited atoms impinge become larger when the substrate temperature decreases. It was verified that the intrinsic stress in silicon thin films depends strongly on the microstructure of the films.

本文言語English
ページ(範囲)1999-2005
ページ数7
ジャーナルNippon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
63
613
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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