Analysis of intrinsic and parasitic gate delay of InGaAs HEMTs

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this paper, the principles, measurement techniques, and analysis of the gate delay of high-electron-mobility-transistors (HEMTs) mainly based on an InP material system are discussed. In the measurement techniques, de-embedding of the pad parasitics is also described. The intrinsic part of the gate delay of HEMTs is the transit time for electrons to travel in the gate depletion region. When the gate length is large enough, the intrinsic gate delay is dominant in the total gate delay. However, as the gate length becomes less than 100 nm, the delay analysis reveals that the intrinsic gate delay is now no longer dominant but the parasitic gate delay ascribed to the resistance and capacitance out of the gate region. Based on these results, ways for further improvement of the frequency response are also discussed.

本文言語English
ホスト出版物のタイトルECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
ページ65-72
ページ数8
7
DOI
出版ステータスPublished - 2008 12 1
イベントState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
継続期間: 2008 10 122008 10 17

出版物シリーズ

名前ECS Transactions
番号7
16
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1208/10/17

ASJC Scopus subject areas

  • Engineering(all)

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