Analysis of high-speed signal behavior in a miniaturized interconnect

Akihiro Morimoto, Koji Kotani, Kazushi Takahashi, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Precise interconnect analysis is strongly required for giga-scale integration the operation frequency of which is excess 10 GHz. In this study, detailed and accurate analyses of a coaxial interconnect and an actual rectangular interconnect have been performed by the direct evaluation of Maxwell's equations and the finite element method, respectively. It has been revealed that there are two propagation modes for LSI interconnects: skin depth limited propagation mode and interconnect induced slow wave mode. In a miniaturized interconnect, the propagation mode is the interconnect induced slow wave mode; therefore, we cannot obtain the light-speed propagation due to such an interconnect-induced effect. In order to overcome this speed limitation or to improve signal integrity, it is essential to introduce a short interconnect for a miniaturized structure, and a much larger interconnect than the skin depth. We propose a gas-isolated interconnect as a candidate for an ultimately low-k structure in order to increase the signal-propagation speed. By the introduction of such structures, the performance of miniaturized devices in the deep submicron region will be effectively enhanced.

本文言語English
ページ(範囲)1111-1118
ページ数8
ジャーナルIEICE Transactions on Electronics
E85-C
5
出版ステータスPublished - 2002 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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