Analysis of growth rate of silicon nanowires

J. Kikkawa, Y. Ohno, S. Takeda

研究成果: Conference article査読

抄録

We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365°C and 495°C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

本文言語English
論文番号F7.25
ページ(範囲)347-352
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
832
出版ステータスPublished - 2005
外部発表はい
イベント2004 MRS Fall Meeting - Boston, MA, United States
継続期間: 2004 11月 292004 12月 2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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