Analysis of growth rate of silicon nanowires

J. Kikkawa, Y. Ohno, S. Takeda

研究成果: Conference article

抜粋

We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365°C and 495°C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

元の言語English
記事番号F7.25
ページ(範囲)347-352
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
832
出版物ステータスPublished - 2005
イベント2004 MRS Fall Meeting - Boston, MA, United States
継続期間: 2004 11 292004 12 2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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