Analysis of formation process of ferroelectric domain structure in PZT thin films by in-situ TEM

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

研究成果: Conference article

2 引用 (Scopus)

抜粋

Pb(Zrx,Til-x)O3 (PZT) thin films (Zr/Ti=0.2/0.8) were deposited on the (001) SrTiO3 single crystal substrates by PLD method. The ferroelectric-ferroelastic 90° domain structure formation process was examined in real time by in-situ heating TEM method. The 90° domain contrast weakened with heating, and disappeared about 470°C. The shape of the 90° domains were almost not changed till they have disappeared. In the 90° domain formation cooling process, the a-domain appeared at the same locus, in the same shape and configuration before the in-situ TEM experiment.

元の言語English
ページ(範囲)203-206
ページ数4
ジャーナルKey Engineering Materials
228-229
出版物ステータスPublished - 2002 1 1
外部発表Yes
イベントAsian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
継続期間: 2001 10 12001 10 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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