Analysis of excitation density effects on the scintillation properties of Ce:Gd2SiO5 (GSO) crystals

Takayuki Yanagida, Masanori Koshimizu, Yutaka Fujimoto, Satoshi Kurashima, Kazuhiro Iwamatsu, Atsushi Kimura, Mitsumasa Taguchi, Go Okada, Noriaki Kawaguchi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We analyzed the effects of the excitation density or linear energy transfer (LET) on the scintillation temporal profiles of Gd2SiO5(GSO):Ce by using pulsed ion beams of 20 MeV H+, 50 MeV He2+, and 220 MeV C5+. The rise was faster at higher LET, while the decay was similar at largely different LETs. The LET effects on the rise are explained in terms of the competition between the quenching owing to the interaction between the 6PJ excited states at neighboring Gd3+ ions and the energy transfer to Ce3+ ions.

本文言語English
ページ(範囲)27-30
ページ数4
ジャーナルNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
409
DOI
出版ステータスPublished - 2017 10 15

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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