Analysis of charge-to-hot-carrier degradation in Ge pFinFETs

Wataru Mizubayashi, Hiroshi Oka, Koichi Fukuda, Yuki Ishikawa, Kazuhiko Endo

研究成果: Conference contribution

抄録

We have investigated the charge-to-hot-carrier degradation (QHCD) in Ge pFinFETs with HfO2/Al2O3/GeO2 gate stacks. The QHCD of Ge pFinFETs has a power-law relationship with drain current at each drain voltage, regardless of gate length. Hot-carrier degradation (HCD) is caused when hot holes generated by impact ionization are trapped in as-grown hole traps [1] in the GeO2 interfacial layer and the trap sites in HfO2/Al2O3 film. The velocity of hot carriers of Ge is high because the carrier mobility of Ge is high. In the case of high-velocity hot carriers, the detrapping of the trapped carriers occurs at a constant rate. Therefore, the trapping rate of hot carriers depends on the drain current. This is the reason why QHCD has a power-law relationship with drain current. Also, in the case of a high impact ionization rate such as that of Ge, the generation of hot carriers is sensitive to the lateral electric field, which is related to the drain voltage. This is the reason why the power-law relationship of QHCD is determined by drain voltage.

本文言語English
ホスト出版物のタイトル2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728131993
DOI
出版ステータスPublished - 2020 4
イベント2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
継続期間: 2020 4 282020 5 30

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2020-April
ISSN(印刷版)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period20/4/2820/5/30

ASJC Scopus subject areas

  • Engineering(all)

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