Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells

T. Ozaki, A. Nitayama, T. Hamamoto, K. Sunouchi, F. Horiguchi

研究成果: Article

3 引用 (Scopus)

抜粋

Evidence is presented demonstrating that the band-to-band tunneling leakage current mainly occurs at the edge of the self-aligned isolation rather than the trench upper corners. Moreover, the leakage current increases drastically with the decrease of capacitor oxide thickness. We clarify that the leakage current limits the thickness of capacitor oxide to more than 80 A, even if the operation voltage is reduced to 3.3 V from 5 V.

元の言語English
ページ(範囲)95-97
ページ数3
ジャーナルIEEE Electron Device Letters
12
発行部数3
DOI
出版物ステータスPublished - 1991 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Ozaki, T., Nitayama, A., Hamamoto, T., Sunouchi, K., & Horiguchi, F. (1991). Analysis of Band-to-Band Tunneling Leakage Current in Trench-Capacitor DRAM Cells. IEEE Electron Device Letters, 12(3), 95-97. https://doi.org/10.1109/55.75723