A low dose As** plus implanted GaAs wafers are analyzed from the three integral axes LT AN BR 100 RT AN BR , LT AN BR 110 RT AN BR and LT AN BR 111 RT AN BR for the purpose of site location of displaced interstitial atoms by means of a high depth resolution RBS/channeling technique. As the results, double yield peaks have been observed, one (the first peak) arising from the disorder region formed around R//p (approximately 32nm) and another (the second peak) from the deeper region than R//p. The interstitial sites responsible for those peaks have been found to interchange through six stages of annealing and assigned at each stage. It is shown that the complexed interstitial structures such as the twin relaxed bond centered one and the twin split LT AN BR 100 RT AN BR interstitial (cy) one are formed at higher annealing temperatures.
|ジャーナル||Report of Research Center of Ion Beam Technology, Hosei University. Supplement|
|出版ステータス||Published - 1985 12月 1|
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