An ultraviolet radiation sensor using differential spectral response of silicon photodiodes

Yhang Ricardo Sipauba Carvalho Da Silva, Yasumasa Koda, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

An ultraviolet (UV) sensor is demonstrated with high sensitivity in the UV waveband and low sensitivity in the visible (VIS) and near-infrared (NIR) wavebands, utilizing only bulk silicon technology. The developed sensor utilizes the differential spectral response of photodiodes (PDs) with a high UV sensitivity (PD1) and a low UV sensitivity (PD2), for UV signal extraction under a VIS and NIR light background. To suppress the effects of incident light spatial strength distribution over the sensor, PD1 and PD2 were arranged in a checkered pattern of 8×6 PDs. High Signal to Noise Ratio (SNR) for UV signal extraction was achieved by a developed prototype UV sensor circuit consisted of charge amplifiers connected to PDs and a differential amplifier. The fabricated PD chip has a total area of 1.2 mm2, PD1 and PD2 showed a sensitivity of 0.16 A/W and 0.02 A/W at 310 nm, respectively. The spectral response of the UV sensor was measured and the UV waveband selective sensitivity was successfully obtained.

本文言語English
ホスト出版物のタイトル2015 IEEE SENSORS - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(印刷版)9781479982028
DOI
出版ステータスPublished - 2015 12月 31
イベント14th IEEE SENSORS - Busan, Korea, Republic of
継続期間: 2015 11月 12015 11月 4

Other

Other14th IEEE SENSORS
国/地域Korea, Republic of
CityBusan
Period15/11/115/11/4

ASJC Scopus subject areas

  • 器械工学
  • 電子材料、光学材料、および磁性材料
  • 分光学
  • 電子工学および電気工学

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