An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor

Yasuyuki Fujihara; Maasa Murata; Shota Nakayama; Rihito Kuroda; Shigetoshi Sugawa

doi:10.1109/TED.2020.3038621

An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor

Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa

研究成果: Article › 査読

15 被引用数 (Scopus)

抄録

This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

本文言語	English
論文番号	9281334
ページ（範囲）	152-157
ページ数	6
ジャーナル	IEEE Transactions on Electron Devices
巻	68
号	1
DOI	https://doi.org/10.1109/TED.2020.3038621
出版ステータス	Published - 2021 1月

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/TED.2020.3038621

他のファイルとリンク

引用スタイル

@article{bfd6491288f84c2d943fd81554dec487,

title = "An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor",

abstract = "This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.",

keywords = "CMOS image sensor (CIS), lateral overflow integration capacitor (LOFIC), signal-to-noise ratio (SNR), wide dynamic range (WDR)",

author = "Yasuyuki Fujihara and Maasa Murata and Shota Nakayama and Rihito Kuroda and Shigetoshi Sugawa",

note = "Funding Information: Manuscript received September 3, 2020; revised October 23, 2020; accepted November 11, 2020. Date of publication December 4, 2020; date of current version December 24, 2020. This work was supported by the Japan Society for the Promotion of Science (JSPS) the Grant-in-Aid for Scientific Research (KAKENHI) under Grant 17H04921 and Grant 18J20657. The review of this article was arranged by Editor L. Pancheri. (Corresponding author: Yasuyuki Fujihara.) The authors are with the Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan (e-mail: yasuyuki.fujihara. q1@dc.tohoku.ac.jp). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2021",

month = jan,

doi = "10.1109/TED.2020.3038621",

language = "English",

volume = "68",

pages = "152--157",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor

AU - Fujihara, Yasuyuki

AU - Murata, Maasa

AU - Nakayama, Shota

AU - Kuroda, Rihito

AU - Sugawa, Shigetoshi

N1 - Funding Information: Manuscript received September 3, 2020; revised October 23, 2020; accepted November 11, 2020. Date of publication December 4, 2020; date of current version December 24, 2020. This work was supported by the Japan Society for the Promotion of Science (JSPS) the Grant-in-Aid for Scientific Research (KAKENHI) under Grant 17H04921 and Grant 18J20657. The review of this article was arranged by Editor L. Pancheri. (Corresponding author: Yasuyuki Fujihara.) The authors are with the Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan (e-mail: yasuyuki.fujihara. q1@dc.tohoku.ac.jp). Publisher Copyright: © 1963-2012 IEEE.

PY - 2021/1

Y1 - 2021/1

N2 - This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

AB - This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

KW - CMOS image sensor (CIS)

KW - lateral overflow integration capacitor (LOFIC)

KW - signal-to-noise ratio (SNR)

KW - wide dynamic range (WDR)

UR - http://www.scopus.com/inward/record.url?scp=85097941262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85097941262&partnerID=8YFLogxK

U2 - 10.1109/TED.2020.3038621

DO - 10.1109/TED.2020.3038621

M3 - Article

AN - SCOPUS:85097941262

SN - 0018-9383

VL - 68

SP - 152

EP - 157

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 9281334

ER -

An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル