An over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor with Two-Stage Lateral Overflow Integration Capacitor

Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa

研究成果: Article査読

5 被引用数 (Scopus)

抄録

This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.

本文言語English
論文番号9281334
ページ(範囲)152-157
ページ数6
ジャーナルIEEE Transactions on Electron Devices
68
1
DOI
出版ステータスPublished - 2021 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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