An LSI for the Massive Parallel Electron Beam Lithography using nc-Si (Nano Cristal Silicon) has been developed. It can drive a 100×100 electron emitter as an active matrix electron emitter with an innovative aberration correction scheme, a compensation scheme for electron beam intensity variation and a test circuit for testing LSI during integration on the system. This LSI was evaluated and confirmed its basic function of the active matrix, the electron emitter process variation compensation and the test for integrated devices.
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering