An LSI for massive parallel electron beam lithography: Its design and evaluation

Hiroshi Miyaguchi, Masanori Muroyama, Shinya Yoshida, Naokatsu Ikegami, Akira Kojima, Ryosuke Kaneko, Kentaro Totsu, Shuji Tanaka, Nobuyoshi Koshida, Masayoshi Esashi

研究成果: Article査読

1 被引用数 (Scopus)

抄録

An LSI for the Massive Parallel Electron Beam Lithography using nc-Si (Nano Cristal Silicon) has been developed. It can drive a 100×100 electron emitter as an active matrix electron emitter with an innovative aberration correction scheme, a compensation scheme for electron beam intensity variation and a test circuit for testing LSI during integration on the system. This LSI was evaluated and confirmed its basic function of the active matrix, the electron emitter process variation compensation and the test for integrated devices.

本文言語English
ページ(範囲)374-381
ページ数8
ジャーナルIEEJ Transactions on Sensors and Micromachines
135
10
DOI
出版ステータスPublished - 2015 10 1

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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