An experimental study on the thermal stability of sputtered TiN gates for gate-first FinFETs

Y. X. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, K. Ishii, T. Shimizu, E. Suzuki

研究成果: Conference contribution

抄録

The optimal TiN deposition and the thermal stability of the puttered TiN have experimentally been investigated for the advanced gate-first FinFET fabrication. It was experimentally found that the φTiN markedly decreases and the Vth can be set to a lower value with increasing TR to 855°C owing to the pile-up of nitrogen atoms at the Si-SiO2 interface. These experimental results are very useful to set the correct V th for TiN gate-first FinFETs.

本文言語English
ホスト出版物のタイトル2005 International Semiconductor Device Research Symposium
ページ201-202
ページ数2
出版ステータスPublished - 2005 12月 1
外部発表はい
イベント2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
継続期間: 2005 12月 72005 12月 9

出版物シリーズ

名前2005 International Semiconductor Device Research Symposium
2005

Other

Other2005 International Semiconductor Device Research Symposium
国/地域United States
CityBethesda, MD
Period05/12/705/12/9

ASJC Scopus subject areas

  • 工学(全般)

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