An experimental observation of photo-induced carrier multiplication in hydrogenated amorphous silicon

S. Sugawa, K. Ohmi, M. Yamanobe, Y. Osada

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A photo-induced carrier multiplication in a hydrogenated amorphous silicon has been observed. A careful measurement of photo-carrier generation has been done with amorphous silicon Schottky barrier structure junctions as a function of incident photon energy in the range between 1.55eV and 6.2eV. The quantum efficiency is estimated to be multiplied by a factor of two in higher photon energy region than 5.4eV. This multiplication can be explained by an interband carrier ionization due to the energy given by a high energy photo-carrier.

本文言語English
ページ(範囲)373-376
ページ数4
ジャーナルSolid State Communications
80
6
DOI
出版ステータスPublished - 1991 11
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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