An electronically-driven volume transition in CeSi2-xGax

H. Mori, Nobuya Sato, T. Sato

研究成果: Article査読

26 被引用数 (Scopus)

抄録

The pseudobinary compounds CeSi2-xGax were prepared, and the lattice parameters and the susceptibilities were measured. At the Si-rich end, 0≦x<0.2, the system behaves as one with a high (∼200K) Kondo temperature exhibiting no magnetic order. For 0.5<x≦1.3, the system shows the unit-cell volume 3% larger and orders ferromagnetically around 10K. The α-ThSi2 structure is retained up to x=1.3, but one observes a two-phase region for 0.2≦x≦0.5, consisting of small- and large-volume phases. This volume transition is magnetically one of the most drastic compared to previously studied Ce-based pseudobinaries.

本文言語English
ページ(範囲)955-958
ページ数4
ジャーナルSolid State Communications
49
10
DOI
出版ステータスPublished - 1984 3

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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