An electron-beam-induced current investigation of electrical defects in high-k gate stacks

J. Chen, T. Sekiguchi, N. Fukata, M. Takase, Y. Nemoto, R. Hasunuma, K. Yamabe, M. Sato, K. Yamada, T. Chikyow

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We succeeded in applying electron-beam-induced current (EBIC) technique to visualize the current leakage sites in the MOS devices with HfSiON gate dielectrics. The occurrence of initial leakage sites in fresh devices has been investigated with consideration of the effects of well type, gate size and gate electrode. Stress-induced leakage and breakdown sites were studied by in situ voltage stress and EBIC characterization. Finally, the microstructure and physical damages at various leakage sites were characterized by TEM. Based on the EBIC and TEM results, the leakage and breakdown mechanisms of HfSiON gate stacks were discussed.

本文言語English
ホスト出版物のタイトルDielectrics for Nanosystems 4
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing
ページ299-313
ページ数15
2
DOI
出版ステータスPublished - 2010 12 30
イベント4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting - Vancouver, BC, Canada
継続期間: 2010 4 262010 4 28

出版物シリーズ

名前ECS Transactions
番号2
28
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2610/4/28

ASJC Scopus subject areas

  • Engineering(all)

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