An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Riichiroh Shirota, Masaki Momodomi, Fujio Masuoka

研究成果: Article査読

32 被引用数 (Scopus)

抄録

This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

本文言語English
ページ(範囲)290-296
ページ数7
ジャーナルIEEE Transactions on Electron Devices
37
1
DOI
出版ステータスPublished - 1990 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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