An Accurate Model of Subbreakdown Due to Bandto-Band Tunneling and Some Applications

Tetsuo Endoh, Riichiroh Shirota, Masaki Momodomi, Fujio Masuoka

研究成果: Article査読

35 被引用数 (Scopus)

抄録

This paper describes an accurate new model for and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Results calculated by this model agree well with experimental results. This new model provides a good understanding of the subbreakdown phenomenon. Furthermore, it is shown by this model how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current.

本文言語English
ページ(範囲)290-296
ページ数7
ジャーナルIEEE Transactions on Electron Devices
37
1
DOI
出版ステータスPublished - 1990 1月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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