An 80-Gb/s optoelectronic delayed flip-flop IC using resonant tunneling diodes and uni-traveling-carrier photodiode

K. Sano, K. Murata, T. Otsuji, T. Akeyoshi, N. Shimizu, E. Sano

研究成果: Article査読

47 被引用数 (Scopus)

抄録

This paper describes an 80-Gb/s optoelectronic delayed flip-flop (D-FF) IC that uses resonant tunneling diodes (RTDs) and a uni-traveling-carrier photodiode (UTC-PD). A circuit design that considers the ac currents passing through RTDs and UTC-PD is key to boosting circuit operation speed. A monolithically fabricated IC operated at 80 Gb/s with a low power dissipation of 7.68 mW. The operation speed of 80 Gb/s is the highest among all reported flip-flops. To clarify the maximum operation speed, we analyze the factors limiting circuit speed. Although the bandwidth of UTC-PD limits the maximum speed of operation to 80 Gb/s at present, the circuit has the potential to offer 100-Gb/s-class operation.

本文言語English
ページ(範囲)281-289
ページ数9
ジャーナルIEEE Journal of Solid-State Circuits
36
2
DOI
出版ステータスPublished - 2001 2 1
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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