Ambipolar Photocarrier Doping and Transport in Monolayer WS by Forming a Graphene/WS/Quantum Dots Heterostructure

Guanghui Cheng, Baikui Li, Chunyu Zhao, Zijing Jin, Kei May Lau, Jiannong Wang

研究成果: Article査読

抄録

In this work, we demonstrated that {p} -type and {n} -type conduction could be induced in unintentionally doped pristine monolayer (ML) WS2 by forming a hybrid WS2/InGaN quantum dots (QDs) heterostructure, in which the ML-WS2 is partially covered by few-layer graphene. Under illumination, the photo-generated holes or electrons in the QDs were injected vertically into the ML-WS2 and then transported laterally therein. The polarity of the WS2 channel can be controlled by the bias applied to the graphene electrode. This work provides a potential approach to develop ambipolar devices of ML transition metal dichalcogenides through photocarrier doping.

本文言語English
論文番号9321548
ページ(範囲)371-374
ページ数4
ジャーナルIEEE Electron Device Letters
42
3
DOI
出版ステータスPublished - 2021 3
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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