Ambipolar MoTe₂ transistors and their applications in logic circuits

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe₂) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe₂ contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V _bg) and drain-source voltage (V _ds). Using these ambipolar MoTe₂ transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.