Ambipolar MoTe2 transistors and their applications in logic circuits

Yen Fu Lin, Yong Xu, Sheng Tsung Wang, Song Lin Li, Mahito Yamamoto, Alex Aparecido-Ferreira, Wenwu Li, Huabin Sun, Shu Nakaharai, Wen Bin Jian, Keiji Ueno, Kazuhito Tsukagoshi

研究成果: Article査読

342 被引用数 (Scopus)

抄録

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V bg) and drain-source voltage (V ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.

本文言語English
ページ(範囲)3263-3269
ページ数7
ジャーナルAdvanced Materials
26
20
DOI
出版ステータスPublished - 2014 5月 28
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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