Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems

Yun Sok Shin, Roland Brunner, Akihiro Shibatomi, Toshiaki Obata, Tomohiro Otsuka, Jun Yoneda, Yasuhiro Shiraki, Kentarou Sawano, Yasuhiro Tokura, Yuichi Harada, Koji Ishibashi, Seigo Tarucha

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We investigate the gating properties of Si/SiGe two-dimensional electron gas systems with various gate materials and fabricate a lateral Si/SiGe quantum dot by gating through an Al2O3 film. In comparison to the conventional surface Schottky gates, gating through a thin Al2O 3 layer provides a strong suppression of leakage current. The fabricated quantum dot shows a periodic current oscillation or Coulomb oscillation with negligible gate leakage, indicating that the gating employed may be good for implementing Si/SiGe-based spin qubit devices with quantum dots.

本文言語English
論文番号055004
ジャーナルSemiconductor Science and Technology
26
5
DOI
出版ステータスPublished - 2011
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Aluminum oxide for an effective gate in Si/SiGe two-dimensional electron gas systems」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル