Aluminum nitride based thin film bulk acoustic resonator using germanium sacrificial layer etching

Motoaki Hara, J. Kuypers, T. Abe, Masayoshi Esashi

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We report the development of aluminum nitride (AlN) thin film bulk acoustic resonator (FBAR). This resonator has an air gap beneath the resonator to obtain high Q factor and low spurious response. Germanium (Ge) was used as a sacrificial layer for the air gap. This technique gives very simple process and high CMOS compatibility. The FBAR was evaluated about the effect of the air gap and the electrode size. The FBAR achieved a resonant frequency of 2 GHz, a Q factor of 780 and an effective electro-mechanical coupling constant (keff2) of 5.36%.

本文言語English
ホスト出版物のタイトルTRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1780-1783
ページ数4
ISBN(電子版)0780377311, 9780780377318
DOI
出版ステータスPublished - 2003 1月 1
イベント12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers - Boston, United States
継続期間: 2003 6月 82003 6月 12

出版物シリーズ

名前TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers
2

Other

Other12th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2003 - Digest of Technical Papers
国/地域United States
CityBoston
Period03/6/803/6/12

ASJC Scopus subject areas

  • 電子工学および電気工学

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