Alpha-sexthiophene/n - Si heterojunction diodes and solar cells investigated by I-V and C-V measurements

Y. Takanashi, N. Oyama, K. Momiyama, Y. Kimura, M. Niwano, F. Hirose

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The forward and reverse current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of alpha-sexthiophene (6T)/n --silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. These observation results indicate that the 6T/n --Si junction has a current rectification characteristic explained by a Schottky heterojunction model. Diode parameters - the Schottky barrier height and ideality factor - were estimated to be 0.75-0.79 eV and 2.5, respectively. A C-V analysis suggests that the depletion layer is generated solely in the n --Si layer on a sub-micron scale from the junction at the zero bias and in the reverse bias condition and the diffusion potential was estimated to be 0.4 eV. This heterojunction allows for power generation with power conversion efficiencies up to 0.4% with a simulated solar light exposure of 50 mW/cm 2.

本文言語English
ページ(範囲)2792-2797
ページ数6
ジャーナルSynthetic Metals
161
23-24
DOI
出版ステータスPublished - 2012 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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