Ce:(Gd,La)2Si2O7 (Ce:La-GPS) and Al co-doped Ce:(Gd,La)2Si2O7 (Al,Ce:La-GPS) single crystals were grown by the micro-pulling-down method to improve the mechanical, optical and scintillation properties. In a tensile test, the maximum strain and stress values in the stress-strain curve of the Al,Ce:La-GPS single crystal compared to the Ce:La-GPS single crystal and the result suggests that there is a possibility of the improvement on the mechanical property by Al co-doping. In addition, the light yield of the La-GPS single crystal under γ-ray irradiation was slightly increased and the decay time was accelerated by the Al co-doping.
ASJC Scopus subject areas
- コンピュータ サイエンス（全般）