Al and Ge simultaneous oxidation using neutral beam post-oxidation for formation of gate stack structures

Takeo Ohno, Daiki Nakayama, Seiji Samukawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

To obtain a high-quality Germanium (Ge) metal-oxide-semiconductor structure, a Ge gate stacked structure was fabricated using neutral beam post-oxidation. After deposition of a 1-nm-thick Al metal film on a Ge substrate, simultaneous oxidation of Al and Ge was carried out at 300 °C, and a Ge oxide film with 29% GeO2 content was obtained by controlling the acceleration bias power of the neutral oxygen beam. In addition, the fabricated AlOx/GeOx/Ge structure achieved a low interface state density of less than 1 × 1011cm-2eV-1 near the midgap.

本文言語English
論文番号133107
ジャーナルApplied Physics Letters
107
13
DOI
出版ステータスPublished - 2015 9月 28

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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