Air-stable p-n junction diodes based on single-walled carbon nanotubes encapsulating Fe nanoparticles

Y. F. Li, R. Hatakeyama, J. Shishido, Toshiaki Kato, Toshiro Kaneko

研究成果: Article査読

49 被引用数 (Scopus)

抄録

The authors report electrical transport properties of p-n junction based on semiconducting single-walled carbon nanotubes (SWCNTs). The formation of p-n junction is realized in SWCNTs, which are encapsulated with Fe nanoparticles at low filling fractions. The devices exhibit an excellent rectifying behavior, and no current down to 10-14 A level flows when the device is biased in reverse. During measurements performed in the temperature range from 10 to 300 K, the devices maintain high reproducibility. More importantly, even after exposure to air, the rectifying characteristic keeps stable, which strongly suggests that ideal p-n junction diodes can be fabricated by SWCNTs.

本文言語English
論文番号173127
ジャーナルApplied Physics Letters
90
17
DOI
出版ステータスPublished - 2007 5 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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