Ag Multilayer island growth on Br-Si(0 0 1)-(2 × 1) and Ag-induced nano-pitting

Koji S. Nakayama; J. H. Weaver

doi:10.1016/j.susc.2004.10.048

Ag Multilayer island growth on Br-Si(0 0 1)-(2 × 1) and Ag-induced nano-pitting

Koji S. Nakayama, J. H. Weaver

未来科学技術共同研究センター

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

Low temperature scanning tunneling microscopy was used to study the formation of single crystal nanostructures of Ag on Br-terminated Si(0 0 1)-(2 × 1) and their interactions with the surface at elevated temperature. Multilayer nanostructures were formed at 640 K. They were facetted, and they exhibited highly-ordered surfaces that were imaged with atomic resolution to identify the 〈0 1 1〉 and 〈1 1 2〉 directions on Ag(1 1 1)-(1 × 1). Heating above 700 K induced reactions involving Ag and Br and the desorption of AgBr. At these temperatures, contact between the Ag islands and Si(0 0 1) also led to Si dissolution in the islands, and three dimensional pits bounded by {1 1 3} facets were produced.

本文言語	English
ページ（範囲）	331-337
ページ数	7
ジャーナル	Surface Science
巻	574
号	2-3
DOI	https://doi.org/10.1016/j.susc.2004.10.048
出版ステータス	Published - 2005 1月 10

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/j.susc.2004.10.048

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@article{be5773a6cc354092a9652abc3e96380b,

title = "Ag Multilayer island growth on Br-Si(0 0 1)-(2 × 1) and Ag-induced nano-pitting",

abstract = "Low temperature scanning tunneling microscopy was used to study the formation of single crystal nanostructures of Ag on Br-terminated Si(0 0 1)-(2 × 1) and their interactions with the surface at elevated temperature. Multilayer nanostructures were formed at 640 K. They were facetted, and they exhibited highly-ordered surfaces that were imaged with atomic resolution to identify the 〈0 1 1〉 and 〈1 1 2〉 directions on Ag(1 1 1)-(1 × 1). Heating above 700 K induced reactions involving Ag and Br and the desorption of AgBr. At these temperatures, contact between the Ag islands and Si(0 0 1) also led to Si dissolution in the islands, and three dimensional pits bounded by {1 1 3} facets were produced.",

keywords = "Ag multilayer islands, Br-Si(0 0 1)-(2 × 1), Scanning tunneling microscopy, Si pit formation",

author = "Nakayama, {Koji S.} and Weaver, {J. H.}",

note = "Funding Information: This work was supported in part by the U.S. Army Research Office and in part by the U.S. Department of Energy, Division of Materials Sciences under Grant Nos. DEFG02-01ER45944 and DEFG02-91ER45439 through the Frederick Seitz Materials Research Laboratory. ",

year = "2005",

month = jan,

day = "10",

doi = "10.1016/j.susc.2004.10.048",

language = "English",

volume = "574",

pages = "331--337",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "2-3",

}

TY - JOUR

T1 - Ag Multilayer island growth on Br-Si(0 0 1)-(2 × 1) and Ag-induced nano-pitting

AU - Nakayama, Koji S.

AU - Weaver, J. H.

N1 - Funding Information: This work was supported in part by the U.S. Army Research Office and in part by the U.S. Department of Energy, Division of Materials Sciences under Grant Nos. DEFG02-01ER45944 and DEFG02-91ER45439 through the Frederick Seitz Materials Research Laboratory.

PY - 2005/1/10

Y1 - 2005/1/10

N2 - Low temperature scanning tunneling microscopy was used to study the formation of single crystal nanostructures of Ag on Br-terminated Si(0 0 1)-(2 × 1) and their interactions with the surface at elevated temperature. Multilayer nanostructures were formed at 640 K. They were facetted, and they exhibited highly-ordered surfaces that were imaged with atomic resolution to identify the 〈0 1 1〉 and 〈1 1 2〉 directions on Ag(1 1 1)-(1 × 1). Heating above 700 K induced reactions involving Ag and Br and the desorption of AgBr. At these temperatures, contact between the Ag islands and Si(0 0 1) also led to Si dissolution in the islands, and three dimensional pits bounded by {1 1 3} facets were produced.

AB - Low temperature scanning tunneling microscopy was used to study the formation of single crystal nanostructures of Ag on Br-terminated Si(0 0 1)-(2 × 1) and their interactions with the surface at elevated temperature. Multilayer nanostructures were formed at 640 K. They were facetted, and they exhibited highly-ordered surfaces that were imaged with atomic resolution to identify the 〈0 1 1〉 and 〈1 1 2〉 directions on Ag(1 1 1)-(1 × 1). Heating above 700 K induced reactions involving Ag and Br and the desorption of AgBr. At these temperatures, contact between the Ag islands and Si(0 0 1) also led to Si dissolution in the islands, and three dimensional pits bounded by {1 1 3} facets were produced.

KW - Ag multilayer islands

KW - Br-Si(0 0 1)-(2 × 1)

KW - Scanning tunneling microscopy

KW - Si pit formation

UR - http://www.scopus.com/inward/record.url?scp=11344266542&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11344266542&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2004.10.048

DO - 10.1016/j.susc.2004.10.048

M3 - Article

AN - SCOPUS:11344266542

VL - 574

SP - 331

EP - 337

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 2-3

ER -

Ag Multilayer island growth on Br-Si(0 0 1)-(2 × 1) and Ag-induced nano-pitting

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