AEM investigation of interface structure of Y2O 3-Ta2O5 co-doped zirconia buffer layer

Takanori Kiguchi, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

研究成果: Conference article査読

3 被引用数 (Scopus)


The effect of Ta doping on the growth of the SiOx layer in YSZ/Si gate dielectrics has been investigated by Analytical TEM (AEM) method. Most part of the YTaSZ layer has epitaxially grown like as YSZ layer. Capacitance-voltage (C-V) hysteresis of YTaSZ film has been suppressed perfectly. It has been, however, that the SiOx thickness of Ta doped YSZ/Si became thicker than YSZ/Si, and that the roughness of the interface between SiOx/Si has been increased. Density of interface trapped charge has been also increased. HRTEM and TEM-EDS analysis has revealed that some of the doped Ta was diffused into SiOx interface layer and the surface of Si substrate, which is thought to be the cause of interface trapped charge.

ジャーナルKey Engineering Materials
出版ステータスPublished - 2004 1 1
イベントProceedings of the 23rd Electronics Division Meeting of the Ceramic Society of Japan - Kawasaki, Japan
継続期間: 2003 10 232003 10 24

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学


「AEM investigation of interface structure of Y<sub>2</sub>O <sub>3</sub>-Ta<sub>2</sub>O<sub>5</sub> co-doped zirconia buffer layer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。