Advantages of silicon nanowire metal-oxide-semiconductor field-effect transistors over planar ones in noise properties

Wei Feng, Ranga Hettiarachchi, Soshi Sato, Kuniyuki Kakushima, Masaaki Niwa, Hiroshi Iwai, Keisaku Yamada, Kenji Ohmori

研究成果: Article査読

13 被引用数 (Scopus)

抄録

We have investigated the low-frequency noise behavior of silicon nanowire metal-oxide-semiconductor field-effect transistors (NWFETs) by comparison with that of a planar FET. We have found that the NWFET exhibits lower noise intensity than the planar FET. By analyzing the factors influential to noise intensity, one of the most possible origins of this advantage of the NWFET results from the electron distribution in the channel in NWFET. Owing to quantum confinement, the position of charge-centroids in the channel of NWFET is located further from the interface, resulting in the lower trapping probability between the electrons and oxide traps. These results clearly demonstrate the advantage of three-dimensional structures in static and noise properties.

本文言語English
論文番号04DC06
ジャーナルJapanese journal of applied physics
51
4 PART 2
DOI
出版ステータスPublished - 2012 4

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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