Advantages of nano-grating substrates in CMOS -FET characteristics

Xiaoli Zliu, Shin Ichiro Kuroki, Koji Kotani, Takashi Ito

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The drivability enhancement of CMOSFET of both n-type and p-type was achieved by using nano-grating silicon substrate without any complex fabrication process. The transconductances of both nMOSFET and pMOSFET on nano-grating substrates were increased thanks to the increase in effective channel width, leading to the area advantage of about 64% normalized by that of a conventional substrate. The channels were formed on horizontal (100) and vertical (110) surfaces of the nano-grating. Due to the existence of the current flowing in 〈110〉 direction on (110) surface, the effective carrier mobility in nano-grating nMOSFET was lower, while that in nano-grating pMOSFET was larger than the conventional one. So the difference of drivability enhancement between nMOSFET and pMOSFET became slighter, from which the area balance of CMOS circuit fabricated on the nano-grating substrates were improved.

本文言語English
ホスト出版物のタイトルECS Transactions - 5th International Symposium on ULSI Process Integration
出版社Electrochemical Society Inc.
ページ467-472
ページ数6
6
ISBN(電子版)9781566775724
ISBN(印刷版)9781566775724
DOI
出版ステータスPublished - 2007
外部発表はい
イベント5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
継続期間: 2007 10 72007 10 12

出版物シリーズ

名前ECS Transactions
番号6
11
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
国/地域United States
CityWashington, DC
Period07/10/707/10/12

ASJC Scopus subject areas

  • 工学(全般)

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