Advantage of radical oxidation for improving reliability of ultra-thin gate oxide

Yuji Saito, Katsuyuki Sekine, Naoki Ueda, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Conference article査読

39 被引用数 (Scopus)

抄録

This paper focuses attention on advantage of oxygen radical oxidation by microwave-excited high-density Kr/O2 plasma for improving disadvantages of conventional thermal oxidation process using H2O and/or O2 molecule, and demonstrates that Kr/O2 plasma oxidation process can improve thickness variation on shallow-trench isolation and integrity of silicon oxide not only on (100) surface but also on (111) surface compared to those of conventional thermal oxidation process.

本文言語English
ページ(範囲)176-177
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 2000 1 1
イベント2000 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 2000 6 132000 6 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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