Advanced TiN metal-gate FinFET technology

Y. X. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, K. Ishii, T. Shimizu, H. Yamauchi, S. O'uchi, Eiichi Suzuki

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The TiN-gate CMOS FinFET technologies for high-performance connected-double-gate 3-terminal (3T) and flexible threshold voltage (V th) controllable independent-double-gate 4-terminal (4T) FinFETs integration have experimentally been investigated. By using the conventional reactive sputtering, the uniform TiN deposition on the sidewalls of upstanding Si-fin channels was realized by optimizing the pressure during the sputtering. Moreover, the well symmetrical Vth, N- and P-channel 3T-FinFETs with the fin-height tuning and the co-integration of the TiN-gated high-performance 3T- and highly Vth-controllable 4T-FinFETs using the resist etch-back process were demonstrated. The developed technologies are very attractive for the high-performance and power-managed CMOS FinFETs circuits. Copyright The Electrochemical Society.

本文言語English
ホスト出版物のタイトルDielectrics for Nanosystems II
ホスト出版物のサブタイトルMaterials Science, Processing, Reliability, and Manufacturing
出版社Electrochemical Society Inc.
ページ197-208
ページ数12
1
ISBN(電子版)1566774381
ISBN(印刷版)1566774381, 9781566774383
出版ステータスPublished - 2006
外部発表はい
イベント2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
継続期間: 2006 5月 72006 5月 12

出版物シリーズ

名前ECS Transactions
番号1
2
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
国/地域United States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • 工学(全般)

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